Parole chiave di "Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces"

Label

• Parole chiave di "Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces" (literal)
• Keywords of "Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces" (literal)

Insieme di parole chiave di

• Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• V COMPOUND SEMICONDUCTORS (Parola chiave)
• DEPOSITION (Parola chiave)
• PASSIVATION (Parola chiave)
• SCANNING-TUNNELING-MICROSCOPY (Parola chiave)
• SPECTROSCOPY (Parola chiave)

Incoming links:

Insieme di parole chiave

• Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces (Articolo in rivista) (Prodotto della ricerca)

Membro di

• SPECTROSCOPY (Parola chiave)
• SCANNING-TUNNELING-MICROSCOPY (Parola chiave)
• DEPOSITION (Parola chiave)
• PASSIVATION (Parola chiave)
• V COMPOUND SEMICONDUCTORS (Parola chiave)