Keywords of "Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature"
- Label
- Keywords of "Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature" (literal)
- Parole chiave di "Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature" (literal)
- Insieme di parole chiave di
- Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Ha membro
- CHEMICAL-VAPOR-DEPOSITION (Parola chiave)
- SILICON (Parola chiave)
- MISFIT DISLOCATION (Parola chiave)
- SYSTEMS (Parola chiave)
- LATTICE (Parola chiave)
- POTENTIALS (Parola chiave)
- ENERGY (Parola chiave)
Incoming links:
- Insieme di parole chiave
- Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Membro di
- SYSTEMS (Parola chiave)
- SILICON (Parola chiave)
- ENERGY (Parola chiave)
- POTENTIALS (Parola chiave)
- CHEMICAL-VAPOR-DEPOSITION (Parola chiave)
- LATTICE (Parola chiave)
- MISFIT DISLOCATION (Parola chiave)
