Parole chiave di "Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes"

Label

• Parole chiave di "Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes" (literal)
• Keywords of "Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes" (literal)

Insieme di parole chiave di

• Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Ha membro

• defect annealing (Parola chiave)
• wide band gap semiconductors (Parola chiave)
• ion implanted diodes (Parola chiave)
• electronic devices (Parola chiave)
• 4H-SiC (Parola chiave)

Incoming links:

Insieme di parole chiave

• Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Membro di

• 4H-SiC (Parola chiave)
• ion implanted diodes (Parola chiave)
• defect annealing (Parola chiave)
• wide band gap semiconductors (Parola chiave)
• electronic devices (Parola chiave)