Keywords of "Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing"

Label

• Keywords of "Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing" (literal)
• Parole chiave di "Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing" (literal)

Insieme di parole chiave di

• Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing (Abstract/Poster in atti di convegno) (Prodotto della ricerca)

Ha membro

• 6H-SiC (Parola chiave)
• electronic devices (Parola chiave)
• post implantation annealing (Parola chiave)
• wide band gap semiconductor (Parola chiave)

Incoming links:

Insieme di parole chiave

• Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing (Abstract/Poster in atti di convegno) (Prodotto della ricerca)

Membro di

• post implantation annealing (Parola chiave)
• 6H-SiC (Parola chiave)
• electronic devices (Parola chiave)
• wide band gap semiconductor (Parola chiave)