TRANS TECH PUBLICATIONS LTD

Label

• TRANS TECH PUBLICATIONS LTD (literal)
• TRANS TECH PUBLICATIONS LTD (literal)

Editore di

• Minimum ionizing particle detector based on p(+)n junction SiC diode (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Structural characterization of 3C-SiC grown using methyltrichlorosilane (Articolo in rivista) (Prodotto della ricerca)
• Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Plasma Treatment of 3C-SiC Surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Incommensurate and commensurate structural modulation in martensitic phases of FSMA (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Low-temperature thermal oxidation of ion-amorphized 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• 2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions (Contributo in atti di convegno) (Prodotto della ricerca)
• Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-implantation annealing in a silane ambient using hot wall CVD (Articolo in rivista) (Prodotto della ricerca)
• Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs (Contributo in atti di convegno) (Prodotto della ricerca)
• C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Correlation between current transport and defects in n+/p 6H-SiC diodes (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Carbon Nanotubes Grown by Catalytic CVD on Silicon Based Substrates for Electronics Applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation (Articolo in rivista) (Prodotto della ricerca)
• Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista) (Prodotto della ricerca)
• Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Contributo in atti di convegno) (Prodotto della ricerca)
• Carbon-cap for ohmic contacts on n-type ion implanted 4H-SiC (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Post-implantation annealing of SiC: relevance of the heating rate (Articolo in rivista) (Prodotto della ricerca)
• Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Simulation of the incomplete ionization of the n-type dopant Phosphorus in 4H-SiC, including screening by free carriers (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)

Preferred label

• TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (CHE) (literal)
• TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (CHE) (literal)

Incoming links:

Editore

• Carbon-cap for ohmic contacts on n-type ion implanted 4H-SiC (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Incommensurate and commensurate structural modulation in martensitic phases of FSMA (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Low-temperature thermal oxidation of ion-amorphized 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Carbon Nanotubes Grown by Catalytic CVD on Silicon Based Substrates for Electronics Applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista) (Prodotto della ricerca)
• Simulation of the incomplete ionization of the n-type dopant Phosphorus in 4H-SiC, including screening by free carriers (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Contributo in atti di convegno) (Prodotto della ricerca)
• Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Minimum ionizing particle detector based on p(+)n junction SiC diode (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Correlation between current transport and defects in n+/p 6H-SiC diodes (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-implantation annealing of SiC: relevance of the heating rate (Articolo in rivista) (Prodotto della ricerca)
• Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs (Contributo in atti di convegno) (Prodotto della ricerca)
• Post-implantation annealing in a silane ambient using hot wall CVD (Articolo in rivista) (Prodotto della ricerca)
• Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• 2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions (Contributo in atti di convegno) (Prodotto della ricerca)
• Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation (Articolo in rivista) (Prodotto della ricerca)
• Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Plasma Treatment of 3C-SiC Surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Structural characterization of 3C-SiC grown using methyltrichlorosilane (Articolo in rivista) (Prodotto della ricerca)