http://www.cnr.it/ontology/cnr/individuo/prodotto/ID193515

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition (Articolo in rivista)

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Label

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition (Articolo in rivista) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Francoise Massines, Christian Sarra-Bournet, Fiorenza Fanelli, Nicolas Naudé, Nicolas Gherardi (2012)
Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition
in Plasma processes and polymers (Internet); Wiley-VCH Verlag Gmbh, Weinheim (Germania)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Francoise Massines, Christian Sarra-Bournet, Fiorenza Fanelli, Nicolas Naudé, Nicolas Gherardi (literal)

Pagina inizio

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Rivista

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PROMES, CNRS, Tecnosud, Rambla de la thermodynamique, 66100 Perpignan, France Physics Department, Quantum Materials and Devices Infrastructure (QMDI), Université de Sherbrooke, J1K 2R1 Québec, Canada CNR - Institute of Inorganic Methodologies and Plasmas (IMIP), c/o Department of Chemistry, University of Bari Aldo Moro-via Orabona 4, 70126 Bari, Italy Université de Toulouse, UPS, INPT, LAPLACE - Laboratoire Plasma et Conversion d'Energie, 118 route de Narbonne, 31062 Toulouse Cedex 9, France CNRS, LAPLACE, 31062 Toulouse, France (literal)

Titolo

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition (literal)

Abstract

Over the last ten years, expansion of atmospheric pressure plasma solutions for surface treatment of materials has been remarkable, however direct plasma technology for thin film deposition needs still great effort. The objective of this paper is to establish the state of the art on scientific and technologic locks, which have to be opened to consider direct atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) a viable option for industrial application. Basic scientific principles to understand and optimize an AP-PECVD process are summarized. Laboratory reactor configurations are reviewed. Reference points for the design and use of AP-PECVD reactors according to the desired thin film properties are given. Finally, solutions to avoid powder formation and to increase the thin film growth rate are discussed. (literal)

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